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SiHJ10N60E

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The SiHJ10N60E from Vishay is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 313 to 360 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for SiHJ10N60E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHJ10N60E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    313 to 360 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    25 nC
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8L
  • Applications
    Switch mode power supplies (SMPS), Flyback converter, Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Consumer - Wall adaptors

Technical Documents
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