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SiHJ6N65E

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The SiHJ6N65E from Vishay is a MOSFET with Continous Drain Current 5.6 A, Drain Source Resistance 755 to 868 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHJ6N65E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHJ6N65E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.6 A
  • Drain Source Resistance
    755 to 868 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    16 nC
  • Power Dissipation
    74 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8L
  • Applications
    Switch mode power supplies (SMPS), Flyback converter, Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Consumer - Wall adaptors

Technical Documents
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