1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiHJ8N60E

SiHJ8N60E

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiHJ8N60E Image

The SiHJ8N60E from Vishay is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 450 to 520 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHJ8N60E can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHJ8N60E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    450 to 520 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    22 nC
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8L
  • Applications
    Switch mode power supplies (SMPS), Flyback converter, Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Consumer - Wall adaptors

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products