The SiHK045N60EF-T1GE3 from Vishay is an N-Channel Enhancement Mode Power MOSFET that is ideal for server and telecom power supplies, switch mode power supplies (SMPS), PFC power supplies, lighting (high-intensity discharge, fluorescent ballast lighting), industrial (welding, induction heating, motor drives, battery chargers, solar (PV inverters)) applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 52 milli-ohms. This MOSFET has a continuous drain current of up to 47 A and power dissipation of less than 278 W. It is based on the 4th generation E series technology with an integrated fast body diode that offers reduced switching and conduction losses. This RoHS-compliant MOSFET is designed to provide a low figure of merit (FOM) and low effective capacitance. It is available in a surface-mount package.