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SiHP18N60E

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The SiHP18N60E from Vishay is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 176 to 202 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHP18N60E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHP18N60E
  • Manufacturer
    Vishay
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    176 to 202 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    46 to 92 nC
  • Power Dissipation
    179 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Medical
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Induction heating - Motor drives - Battery

Technical Documents
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