SiHP25N40D

Note : Your request will be directed to Vishay.

SiHP25N40D Image

The SiHP25N40D from Vishay is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 140 to 170 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for SiHP25N40D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHP25N40D
  • Manufacturer
    Vishay
  • Description
    400 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    140 to 170 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    44 to 88 nC
  • Power Dissipation
    278 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Medical
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Consumer Electronics - Displays (LCD or Plasma TV), Lighting, Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers, SMPS

Technical Documents

Latest MOSFETs

View more products