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SiHS90N65E-GE3

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SiHS90N65E-GE3 Image

The SiHS90N65E-GE3 from Vishay is a MOSFET with Continous Drain Current 87 A, Drain Source Resistance 25 to 29 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHS90N65E-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHS90N65E-GE3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 394 to 591 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    87 A
  • Drain Source Resistance
    25 to 29 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    394 to 591 nC
  • Power Dissipation
    625 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    Super-247
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Induction heating - Motor drives - Battery

Technical Documents
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