1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiHW30N60E-GE3

SiHW30N60E-GE3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiHW30N60E-GE3 Image

The SiHW30N60E-GE3 from Vishay is a MOSFET with Continous Drain Current 29 A, Drain Source Resistance 104 to 125 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHW30N60E-GE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHW30N60E-GE3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 85 to 130 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    29 A
  • Drain Source Resistance
    104 to 125 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    85 to 130 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247AD
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Induction heating - Motor drives - Battery

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products