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SiHW61N65EF-GE3

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The SiHW61N65EF-GE3 from Vishay is a MOSFET with Continous Drain Current 64 A, Drain Source Resistance 41 to 47 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHW61N65EF-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHW61N65EF-GE3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 247 to 371 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    64 A
  • Drain Source Resistance
    41 to 47 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    247 to 371 nC
  • Power Dissipation
    520 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247AD
  • Applications
    Telecommunication - Server and telecom power supplies, Lighting - High-intensity lighting (HID) - Light emitting diodes (LEDs), Consumer and computing - ATX power supplies, Industrial - Welding - Battery chargers, Renewable energy - Solar (PV inverters)

Technical Documents
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