The SiHW70N60EF-GE3 from Vishay is a MOSFET with Continous Drain Current 70 A, Drain Source Resistance 33 to 38 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHW70N60EF-GE3 can be seen below.