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SIJH600E

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60 V N-Channel Trench FET MOSFET

Product Specifications

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Product Details

  • Part Number
    SIJH600E
  • Manufacturer
    Vishay
  • Description
    60 V N-Channel Trench FET MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    8 x 8 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0 to 373 A
  • Drain Source Resistance
    0.00092 to 0.00115 milliohm
  • Drain Source Breakdown Voltage
    0 to 60 V
  • Gate Source Voltage
    0 to 20 V
  • Gate Charge
    0 to 141 nC
  • Power Dissipation
    233 to 333 W
  • Temperature operating range
    -55 to 175 degrees C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    D2PAK (TO-263)

Technical Documents
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