The SiR416DP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 3.1 to 4.2 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for SiR416DP-T1-GE3 can be seen below.