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SiR610DP-T1-RE3

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SiR610DP-T1-RE3 Image

The SiR610DP-T1-RE3 from Vishay is a MOSFET with Continous Drain Current 35.4 A, Drain Source Resistance 23.9 to 33.4 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiR610DP-T1-RE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiR610DP-T1-RE3
  • Manufacturer
    Vishay
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35.4 A
  • Drain Source Resistance
    23.9 to 33.4 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    20 to 38 nC
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Fixed telecom, DC/DC converter, Primary and secondary side switch, Synchronous rectification, LED lighting, Power supplies, Class D amplifier

Technical Documents
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