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SiR892DP-T1-GE3

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The SiR892DP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 2.5 to 4.2 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.6 V. Tags: Surface Mount. More details for SiR892DP-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiR892DP-T1-GE3
  • Manufacturer
    Vishay
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    2.5 to 4.2 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.6 V
  • Gate Charge
    20 to 60 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Low-Side MOSFET in Synchronous Buck dc-to-dc Converters - Game Machine

Technical Documents
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