1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiS126DN-T1-GE3

SiS126DN-T1-GE3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiS126DN-T1-GE3 Image

The SiS126DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 45.1 A, Drain Source Resistance 8.5 to 12.5 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3.5 V. Tags: Surface Mount. More details for SiS126DN-T1-GE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiS126DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    45.1 A
  • Drain Source Resistance
    8.5 to 12.5 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3.5 V
  • Gate Charge
    16 to 32 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Synchronous rectification, Primary side switch, DC/DC converter, Motor drive switch, Battery and load switch, Industrial

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products