The SIS178LDN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 45.3 A, Drain Source Resistance 7.8 to 13.5 milliohm, Drain Source Breakdown Voltage 70 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for SIS178LDN-T1-GE3 can be seen below.