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SiS427EDN-T1-GE3

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SiS427EDN-T1-GE3 Image

The SiS427EDN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current -50 A, Drain Source Resistance 8.8 to 21.3 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.5 to -2.5 V. Tags: Surface Mount. More details for SiS427EDN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiS427EDN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -50 A
  • Drain Source Resistance
    8.8 to 21.3 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1.5 to -2.5 V
  • Gate Charge
    22.6 to 66 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Notebook battery charging, Notebook adapter switch, Load switch / power management for mobile computing

Technical Documents
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