1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiS488DN-T1-GE3

SiS488DN-T1-GE3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

The SiS488DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 4.5 to 7.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.2 V. Tags: Surface Mount. More details for SiS488DN-T1-GE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiS488DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    4.5 to 7.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.2 V
  • Gate Charge
    9.8 to 32 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Synchronous Rectification, Synchronous Buck Converters, Oring, Load Switching, Motor Drive Switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products