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SIS590DN-T1-GE3

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The SIS590DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 139 to 338 milliohm, Drain Source Breakdown Voltage -100 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for SIS590DN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIS590DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    -100 to 100 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    139 to 338 milliohm
  • Drain Source Breakdown Voltage
    -100 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to 2.5 V
  • Gate Charge
    2.3 to 22.4 nC
  • Power Dissipation
    1.6 to 23.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    DC/DC converters, Active clamp, Brushless DC motors, AC/DC inverter, Motor drive switch

Technical Documents
View details on the manufacturer's website
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