The SiSA26DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 2.15 to 3.9 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for SiSA26DN-T1-GE3 can be seen below.