The SiSH106DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 19.5 A, Drain Source Resistance 5.1 to 9.8 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for SiSH106DN-T1-GE3 can be seen below.