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SiSHA06DN-T1-GE3

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SiSHA06DN-T1-GE3 Image

The SiSHA06DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 104 A, Drain Source Resistance 2.4 to 4 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -16 to 20 V, Gate Source Threshold Voltage 1 to 2.4 V. Tags: Surface Mount. More details for SiSHA06DN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiSHA06DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    104 A
  • Drain Source Resistance
    2.4 to 4 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -16 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.4 V
  • Gate Charge
    19.7 to 67 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8SH
  • Applications
    High power density DC/DC, Synchronous rectification, VRMs and embedded DC/DC

Technical Documents
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