1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiSS06DN-T1-GE3

SiSS06DN-T1-GE3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiSS06DN-T1-GE3 Image

The SiSS06DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 172.6 A, Drain Source Resistance 1.15 to 2.03 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -16 to 20 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Surface Mount. More details for SiSS06DN-T1-GE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiSS06DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    172.6 A
  • Drain Source Resistance
    1.15 to 2.03 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -16 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    24.6 to 77 nC
  • Power Dissipation
    65.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8S
  • Applications
    Synchronous rectification, Synchronous buck converter, High power density DC/DC, OR-ing, Load switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products