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SiSS10DN-T1-GE3

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The SiSS10DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 2.2 to 3.6 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -16 to 20 V, Gate Source Threshold Voltage 1.1 to 2.4 V. Tags: Surface Mount. More details for SiSS10DN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiSS10DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    2.2 to 3.6 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -16 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.4 V
  • Gate Charge
    23 to 75 nC
  • Power Dissipation
    57 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8S
  • Applications
    Synchronous rectification, High power density DC/DC, VRMs and embedded DC/DC, Synchronous buck converter, Load switching, Battery management

Technical Documents
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