The SiSS26LDN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 81.2 A, Drain Source Resistance 3.4 to 6.2 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for SiSS26LDN-T1-GE3 can be seen below.