The SiSS30LDN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 55.5 A, Drain Source Resistance 7.05 to 12.2 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for SiSS30LDN-T1-GE3 can be seen below.