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SISS5710DN-T1-GE3

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The SISS5710DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 26.2 A, Drain Source Resistance 26 to 37 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SISS5710DN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SISS5710DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    26.2 A
  • Drain Source Resistance
    26 to 37 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    7.7 to 15 nC
  • Power Dissipation
    54.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8S
  • Applications
    Synchronous rectification, Primary side switch, DC/DC converters, OR-ing and hot swap switch, Power supplies, Motor drive control, Battery management

Technical Documents
View details on the manufacturer's website
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