1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiSS92DN-T1-GE3

SiSS92DN-T1-GE3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiSS92DN-T1-GE3 Image

The SiSS92DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 12.3 A, Drain Source Resistance 140 to 190 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiSS92DN-T1-GE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiSS92DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12.3 A
  • Drain Source Resistance
    140 to 190 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8.1 to 29.6 nC
  • Power Dissipation
    65.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8S
  • Applications
    Primary side switching, Synchronous rectification, DC/DC topologies, Lighting, Load switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products