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SiZ260DT-T1-GE3

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The SiZ260DT-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 7.1 to 24.7 A, Drain Source Resistance 20.4 to 31 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.4 V. Tags: Surface Mount. More details for SiZ260DT-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiZ260DT-T1-GE3
  • Manufacturer
    Vishay
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7.1 to 24.7 A
  • Drain Source Resistance
    20.4 to 31 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.4 V
  • Gate Charge
    6.2 to 27 nC
  • Power Dissipation
    2.8 to 33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAIR 3 x 3S
  • Applications
    POL, Synchronous buck converter, Telecom DC/DC, Resonant converters, Motor drive control

Technical Documents
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