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SiZ350DT-T1-GE3

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The SiZ350DT-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 14.8 to 30 A, Drain Source Resistance 5.63 to 9.44 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1 to 2.4 V. Tags: Surface Mount. More details for SiZ350DT-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiZ350DT-T1-GE3
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    14.8 to 30 A
  • Drain Source Resistance
    5.63 to 9.44 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    1 to 2.4 V
  • Gate Charge
    6.3 to 20.3 nC
  • Power Dissipation
    2.4 to 16.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAIR 3 x 3
  • Applications
    Synchronous buck, DC/DC conversion, Half bridge, POL

Technical Documents
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