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SiZ710DT-T1-GE3

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The SiZ710DT-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 15 to 35 A, Drain Source Resistance 2.7 to 9 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Surface Mount. More details for SiZ710DT-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiZ710DT-T1-GE3
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    15 to 35 A
  • Drain Source Resistance
    2.7 to 9 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    6.9 to 60 nC
  • Power Dissipation
    2.5 to 48 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAIR 6 x 3.7
  • Applications
    Notebook System Power, POL, Synchronous Buck Converter

Technical Documents
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