The C3M0120065J from Wolfspeed is an N-Channel Enhancement Mode SiC Power MOSET. It has a drain-source breakdown voltage of over 650 V, a drain-source voltage of up to 650 V, and a drain-source on-resistance of 120 mΩ. This power MOSFET has a continuous drain current of up to 21 A and power dissipation of less than 86 W. It is based on the 3rd generation SiC MOSFET technology that is capable of delivering higher system efficiency with increased power density and system switching frequency. This MOSFET has a high blocking voltage with low on-resistance and integrates a fast intrinsic diode with a low reverser recovery charge. It is designed to provide a simplified driving and easy paralleling operation and enables new hard switching PFC technologies. This RoHS-compliant MOSFET is available in a surface-mount package that measures 10.180 x 16.178 mm and is ideal for solar inverters, DC/DC converters, and switch-mode power supplies (SMPS), EV battery chargers, and UPS applications.