CAB320M17XM3

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The CAB320M17XM3 from Wolfspeed is a Half-Bridge SiC Power MOSFET that is ideal for energy, medical, motor, and motion control, test and production equipment, transportation, and traction inverter applications. It has a drain-source breakdown voltage of over 1700 V, a drain-source voltage of up to 1700 V, and a drain-source on-resistance of 4.6 milli-ohms. This power module has a continuous drain current of up to 438 A and a power dissipation of less than 50 mW. It features a cross-pin gate-source signal pin-out and terminal layout for direct bus bar connection, enabling a simple, low-inductance design. This power module implements third-generation SiC MOSFET technology and includes a silicon nitride insulator with an integrated copper baseplate for heatsink. It supports isolated, integrated temperature sensing for high-level temperature protection. This power module encompasses a dedicated high-side Kelvin-drain pin for direct voltage sensing, which offers over-current protection. It is available in a module that measures 80 x 53 mm.

Product Specifications

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Product Details

  • Part Number
    CAB320M17XM3
  • Manufacturer
    Wolfspeed
  • Description
    1700 V Half-Bridge SiC Power MOSFET for Medical Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    80 x 53 mm
  • Continous Drain Current
    438 A
  • Drain Source Resistance
    4.6 milli-ohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -8 to 19 V
  • Gate Source Threshold Voltage
    2.5 V
  • Gate Charge
    1245 nC
  • Power Dissipation
    50 mW
  • Temperature operating range
    -40 to 175 Degree C
  • Package Type
    Module
  • Applications
    Energy, Medical, Motor & Motion Control, Test and Production Equipment, Transportation, Traction Inverters

Technical Documents

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