The CAB5R0A23GM4 from Wolfspeed is a Silicon Carbide (SiC) Half-Bridge MOSFET that is designed for high-efficiency power conversion applications. It has a drain-source breakdown voltage of 2300 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 5 milli-ohms. This MOSFET incorporates an aluminum nitride (AlN) substrate for superior thermal performance and offers an optional pre-applied thermal interface material to simplify assembly. It operates in a normally-off, fail-safe mode that enhances reliability in critical power applications. This MOSFET is available in a module that measures 56.7 x 62.8 x 16.4 mm and is ideal for DC fast chargers, energy storage systems, high-efficiency converters and inverters, renewable energy, smart grids, and solar inverter applications.