CPM3-1200-0160A

Note : Your request will be directed to Wolfspeed.

CPM3-1200-0160A Image

The CPM3-1200-0160A from Wolfspeed is a Silicon Carbide MOSFET.  It has a drain-source breakdown voltage of 1200 V, a gate threshold voltage of  2.8 V, and a drain-source on-resistance of less than 256 milli-ohms. This MOSFET has a total charge of 38 nC and a reverse transfer capacitance of 3 pF. It has high blocking voltage with low on-resistance and allows high-speed switching with low capacitance. This Wolfspeed’s Gen 3 high-performance silicon carbide (SiC) MOSFET is resistant to latch-up, easy to parallel and simple to drive. It is available in a package less bare die format that measures 1.50 x 2.83 mm and is ideal for HVAC motor drives, high voltage DC-DC converters, power supplies,  UPS and renewable energy applications.

Product Specifications

View similar products

Product Details

  • Part Number
    CPM3-1200-0160A
  • Manufacturer
    Wolfspeed
  • Description
    1200 V Silicon Carbide MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17 A
  • Drain Source Resistance
    112 to 256 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -4 to 15 V
  • Gate Source Threshold Voltage
    1.8 to 3.6 V
  • Gate Charge
    38 nC
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    HVAC motor drive, Renewable energy, High voltage DC-DC converter, Switch mode power supplies, UPS
  • Note
    Output Capacitance :- 39 pF, Reverse Recovery Charge (Qrr) :- 194 nC

Technical Documents

Latest MOSFETs

View more products