The CPM3-1200-0160A from Wolfspeed is a Silicon Carbide MOSFET.  It has a drain-source breakdown voltage of 1200 V, a gate threshold voltage of  2.8 V, and a drain-source on-resistance of less than 256 milli-ohms. This MOSFET has a total charge of 38 nC and a reverse transfer capacitance of 3 pF. It has high blocking voltage with low on-resistance and allows high-speed switching with low capacitance. This Wolfspeed’s Gen 3 high-performance silicon carbide (SiC) MOSFET is resistant to latch-up, easy to parallel and simple to drive. It is available in a package less bare die format that measures 1.50 x 2.83 mm and is ideal for HVAC motor drives, high voltage DC-DC converters, power supplies,  UPS and renewable energy applications.