1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Yangjie Electronic Technology
  6. 2N7002KCE

2N7002KCE

Download Datasheet Request Quote

Note : Your request will be directed to Yangjie Electronic Technology.

The 2N7002KCE from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 1900 to 3000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for 2N7002KCE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2N7002KCE
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    1900 to 3000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    1.65 to 2.4 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Applications
    Battery operated systems, Solid-state relays, Direct logic-level interface TTL/CMOS

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products