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YJB118G08H

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The YJB118G08H from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 118 A, Drain Source Resistance 4.5 to 9 milliohm, Drain Source Breakdown Voltage 85 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for YJB118G08H can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJB118G08H
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    85 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    118 A
  • Drain Source Resistance
    4.5 to 9 milliohm
  • Drain Source Breakdown Voltage
    85 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    63 nC
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Battery management, Motor control and drive, UPS (Uninterrupible Power Supplies)

Technical Documents
View details on the manufacturer's website
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