The YJD110G08A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 4.2 to 7 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.5 V. Tags: Surface Mount. More details for YJD110G08A can be seen below.