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YJD28GP10A

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The YJD28GP10A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -28 A, Drain Source Resistance 42 to 65 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for YJD28GP10A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJD28GP10A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -28 A
  • Drain Source Resistance
    42 to 65 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    40 nC
  • Power Dissipation
    96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Load Switch, Battery Protection

Technical Documents
View details on the manufacturer's website
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