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YJD35P03A

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The YJD35P03A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -35 A, Drain Source Resistance 15.5 to 30 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for YJD35P03A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJD35P03A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -35 A
  • Drain Source Resistance
    15.5 to 30 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    29.2 nC
  • Power Dissipation
    34 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Battery management, Load switch, Power management

Technical Documents
View details on the manufacturer's website
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