1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Yangjie Electronic Technology
  6. YJD80GP06B

YJD80GP06B

Download Datasheet Request Quote

Note : Your request will be directed to Yangjie Electronic Technology.

The YJD80GP06B from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -80 A, Drain Source Resistance 6.5 to 11 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -18 to 18 V, Gate Source Threshold Voltage -3.5 to -2 V. Tags: Surface Mount. More details for YJD80GP06B can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    YJD80GP06B
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -80 A
  • Drain Source Resistance
    6.5 to 11 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -18 to 18 V
  • Gate Source Threshold Voltage
    -3.5 to -2 V
  • Gate Charge
    82 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Power management, Portable equipment

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products