The YJG10NP10A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -18 to 10 A, Drain Source Resistance 88 to 120 milliohm, Drain Source Breakdown Voltage -100 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 3 V. Tags: Surface Mount. More details for YJG10NP10A can be seen below.