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YJG12NP10A

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The YJG12NP10A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -12 to 25 A, Drain Source Resistance 19 to 130 milliohm, Drain Source Breakdown Voltage -100 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for YJG12NP10A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJG12NP10A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -100 to 100 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -12 to 25 A
  • Drain Source Resistance
    19 to 130 milliohm
  • Drain Source Breakdown Voltage
    -100 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to 2.5 V
  • Gate Charge
    20 to 32 nC
  • Power Dissipation
    0.8 to 62 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5060-8L
  • Applications
    Load switching, Hard switched and high frequency circuits, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
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