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YJG18N04A

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The YJG18N04A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 11 to 19 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for YJG18N04A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJG18N04A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    11 to 19 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    23.6 nC
  • Power Dissipation
    17 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5060-8L
  • Applications
    High current load applications, Load switching, Hard switched and high frequency circuits, Uninterruptible power supply

Technical Documents
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