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YJL3139KAT

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The YJL3139KAT from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -0.5 A, Drain Source Resistance 650 to 2000 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1.1 to -0.35 V. Tags: Surface Mount. More details for YJL3139KAT can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJL3139KAT
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.5 A
  • Drain Source Resistance
    650 to 2000 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1.1 to -0.35 V
  • Gate Charge
    1.24 nC
  • Power Dissipation
    0.28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-723
  • Applications
    PWM application, Portable equipment

Technical Documents
View details on the manufacturer's website
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