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YJN60G10B

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The YJN60G10B from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 15 to 17.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for YJN60G10B can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJN60G10B
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    15 to 17.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    16 nC
  • Power Dissipation
    260 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Switching converters, Motor drivers, Power management

Technical Documents
View details on the manufacturer's website
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