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YJQ3611A

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The YJQ3611A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -17 to 20 A, Drain Source Resistance 23 to 65 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.4 to 2.2 V. Tags: Surface Mount. More details for YJQ3611A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJQ3611A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -17 to 20 A
  • Drain Source Resistance
    23 to 65 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.4 to 2.2 V
  • Gate Charge
    6.08 to 14.23 nC
  • Power Dissipation
    1.3 to 22 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3333-8L
  • Applications
    Wireless charger, Load switch, Power management

Technical Documents
View details on the manufacturer's website
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