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YJS10N02A

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The YJS10N02A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 11 to 25 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for YJS10N02A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJS10N02A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    11 to 25 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    11.05 nC
  • Power Dissipation
    1.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Battery protection, Load switch, Power management

Technical Documents
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