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YJS12G10A

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The YJS12G10A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 14.5 to 17 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for YJS12G10A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJS12G10A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    14.5 to 17 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    16 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    DC/DC Primary Side Switch, Telecom/Server, Synchronous Rectification

Technical Documents
View details on the manufacturer's website
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