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YJS2308A

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The YJS2308A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -3.7 to 5.6 A, Drain Source Resistance 19.5 to 110 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for YJS2308A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJS2308A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.7 to 5.6 A
  • Drain Source Resistance
    19.5 to 110 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    5.41 to 6.05 nC
  • Power Dissipation
    0.8 to 1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    Wireless charger, Load switch, Power management

Technical Documents
View details on the manufacturer's website
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